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- The company held presentations on new product advancements, such as the HBM3E Shinebolt, LPDDR5X CAMM2, and Detachable AutoSSD.
- Samsung is expected to put its ninth-generation V-NAND into commercial production in the first part of 2019 with a double-stack architecture.
- Samsung offered memory solutions to provide high-performance, high-capacity, low-power, and tiny form factors at the edge.
Memory Tech Day 2023 was held lately by Samsung Electronics, a leading global provider of innovative memory technology. About 600 clients, partners, and industry insiders attended this event, which provided a stage for introducing novel ideas and fresh memory products intended to accelerate technological progress in various fields.
Vision for “Memory Reimagined”
The executives from Samsung provided further details on the company’s “Memory Reimagined” concept, including market trends, sustainability objectives, and long-term strategies for retaining memory technology leadership.
The company held presentations on new product advancements, such as the HBM3E Shinebolt, LPDDR5X CAMM2, and Detachable AutoSSD.
Innovations in Transistor Structures and Materials
- Samsung Electronics President and Head of Memory Business, Jung-Bae Lee, provided details on the company’s strategies for tackling the problems posed by the hyperscale era.
- For sub-10-nanometer (nm) DRAM, Samsung is developing novel 3D designs for greater single-chip capacities surpassing 100 gigabits (Gb).
- Samsung is working on NAND flash innovations to improve channel hole etching methods and shrink cell sizes to realize 1,000-layer vertical NAND (V-NAND).
- Samsung is expected to put its ninth-generation V-NAND into commercial production in the first part of 2019 with a double-stack architecture.
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Meeting the Challenges of Hyperscale AI
- Samsung pledged to continue innovating and underline the prospects that the hyperscale AI age offers.
- Emphasizing that working with partners and customers may spur innovation and produce solutions that open up new avenues.
Introducing HBM3E ‘Shinebolt’
- The Shinebolt, a next-generation HBM3E DRAM from Samsung, intends to power AI applications of the future.
- At 9.8 gigabits per second (Gbps) per pin, Shinebolt may reach transfer rates surpassing 1.2 terabytes per second (TBps). These are impressive speeds.
- Samsung’s non-conductive film (NCF) technology optimization made it possible to achieve higher layer stacks and better thermal properties.
- Samples for Shinebolt are available, and products like Samsung’s 8H and 12H HBM3 are in mass production.
Redefining Edge Devices
- Samsung offered memory solutions to provide high-performance, high-capacity, low-power, and tiny form factors at the edge.
- This includes items like LPDDR5X DRAM, LLW2 DRAM for on-device AI, next-generation Universal Flash Storage (UFS), and high-capacity Quad-Level Cell (QLC) SSD BM9C1 for PCs. The LPDDR5X CAMM21 is anticipated to influence the next-generation PC and laptop DRAM industry.
Leading in Automotive Memory Solutions
- Samsung released the Detachable AutoSSD in response to the growing need for shared SSDs and high-bandwidth, high-capacity DRAM in autonomous driving systems.
- With a 4TB capacity, the Detachable AutoSSD can read sequentially at 6,500 megabytes per second (MBps).
- Additionally, Samsung demonstrated LPDDR5X and high-bandwidth GDDR7 in smaller package sizes for automotive applications.
Sustainability Initiatives
- Through its inventions, Samsung has demonstrated its commitment to sustainability by lowering its energy use and carbon impact.
- Plans to reduce environmental effects include employing recycled materials in portable SSD goods and safeguarding ultra-low-power memory technology.
- By optimizing rack capacity and space efficiency, Samsung’s next-generation technologies, including the PBSSD, seek to lower energy consumption for server systems.
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Active Role in Tackling Climate Issues
Through its sustainability effort, “technology that makes technology sustainable,” Samsung’s semiconductor division is actively tackling global climate concerns.
